Modeling Electron Transport in InGaAs-Based Resonant-Tunneling Hot-Electron Transistors

This paper describes the modeling of the resonant-tunneling hot-electron transistor (RHET). In the analysis of the resonanttunneling harrier, we solved the Schrodinger and the Poisson equations self-consistently. We simulated the electron transport in the base and the collector barrier region using the Monte Carlo method, taking account of the space charge in the collector barrier. Our model includes the effect of coupled plasmon-LO phonon scattering and electron-electron scattering in the base region. We calculated the transit time in the base and the collector harrier region. The 50-nm base transit time was 0.059 ps. On the other hand, the 200-nm collector barrier transit time was larger than 1 ps due to intervalley scattering in the collector barrier region. We showed that the collector barrier transit time was reduced to 0.089 ps in the 50-nm collector barrier RHET at a collectorbase voltage of 0.5 V.